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2SC460, 2sc461 silicon npn epitaxial planar application 2SC460 high frequency amplifier, mixer 2sc461 vhf amplifier, mixer outline 1. emitter 2. collector 3. base to-92 (2) 3 2 1
2SC460, 2sc461 2 absolute maximum ratings (ta = 25?) item symbol 2SC460 2sc461 unit collector to base voltage v cbo 30 30 v collector to emitter voltage v ceo 30 30 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 200 200 mw junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c
2SC460, 2sc461 3 electrical characteristics (ta = 25?) 2SC460 2sc461 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 30 30 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 30 30 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 5 ? v i e = 10 m a, i c = 0 collector cutoff current i cbo 0.5 0.5 m av cb = 18 v, i e = 0 emitter cutoff current i ebo 0.5 0.5 m av eb = 2 v, i c = 0 base to emitter voltage v be 0.63 0.75 0.63 0.75 v v ce = 12 v, i c = 2 ma dc current transfer ratio h fe * 1 35 200 35 200 v ce = 12 v, i c = 2 ma collector to emitter saturation voltage v ce(sat) 0.6 1.1 0.6 1.1 v i c = 10 ma, i b = 1 ma gain bandwidth product f t 230 230 mhz v ce = 12 v, i c = 2 ma collector output capacitance c ob 1.8 3.5 1.8 3.5 pf v cb = 10 v, i e = 0, f = 1 mhz 10.7 mhz power gain pg 26 29 dbv ce = 6 v, i e = ? ma f = 10.7 mhz 100 mhz power gain pg 13 17 db v ce = 6 v, i e = ? ma f = 100 mhz noise figure nf 2.0 dbv ce = 6 v, i e = ? ma f = 1mhz r g = 500 w note: 1. the 2SC460 and 2sc461 are grouped by h fe as follows. abc 35 to 70 60 to 120 100 to 200
2SC460, 2sc461 4 small signal y parameters (v ce = 6 v, i c = 1 ma, emitter common) item symbol f 2SC460a, 2s461a 2SC460b, 2sc461b 2SC460c, 2sc461c unit input admittance yie 455 khz 0.58 + j0.074 0.42 + j0.068 0.30 + j0.051 ms 4.5 mhz 0.65 + j0.79 0.50 + j0.7 0.35 + j0.57 10.7 mhz 0.91 + j2.0 0.61 + j1.9 0.39 + j1.3 100 mhz 7.4 + j14 5.6 + j12 3.8 + j6.0 reverse transfer admittance yre 455 khz ?0.003 ?0.003 ?0.003 ms 4.5 mhz ?0.04 ?0.04 ?0.04 10.7 mhz ?0.13 ?0.13 ?0.13 100 mhz ?1.0 ?1.0 ?1.0 forward transfer admittance yfe 455 khz 38 ?j0.1 37 ?j0.1 37 ?j0.2 ms 4.5 mhz 35 ?j1.0 35 ?j1.2 34 ?j1.8 10.7 mhz 34 ?j2.5 34 ?j2.5 33 ?j4.5 100 mhz 28 ?j20 28 ?j19 20 ?j19 output admittance yoe 455 khz 0.0098 + j0.009 0.013 + j0.009 0.016 + j0.012 ms 4.5 mhz 0.02 + j0.09 0.023 + j0.092 0.03 + j0.10 10.7 mhz 0.11 + j0.4 0.11 + j0.4 0.12 + j0.4 100 mhz 0.40 + j1.7 0.50 + j2.0 0.83 + j2.0
2SC460, 2sc461 5 0 50 150 100 250 200 50 ambient temperature ta ( c) collector power dissipation p c (mw) maximum collector dissipation curve 100 150 0 2 6 4 10 8 8 4 collector to emitter voltage v ce (v) collector current i c (ma) typical output characteristics 12 16 20 20 m a 40 60 80 100 i b = 0 0 2 6 4 10 8 0.4 0.2 base to emitter voltage v be (v) collector current i c (ma) typical transfer characteristics 0.6 0.8 1.0 v ce = 6 v 0 20 60 40 100 80 1.0 0.3 0.1 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 31030 v ce = 6 v
2SC460, 2sc461 6 0 1 3 2 5 4 1.0 0.5 0.2 collector current i c (ma) noise figure nf (db) noise figure vs. collector current 2510 v ce = 6 v r g = 500 w f = 1.0 mhz 0 4 16 12 8 24 20 1.0 0.5 0.2 0.1 collector current i c (ma) noise figure nf (db) noise figure vs. collector current 2510 v ce = 6 v r g = 50 w f = 100 mhz 0 2 8 6 4 12 10 100 50 10 20 signal source resistance r g ( w ) noise figure nf (db) noise figure vs. signal source resistance 200 500 1000 v ce = 6 v i c = 1 ma f = 100 mhz 0 100 300 200 500 400 1.0 0.3 0.1 collector current i c (ma) gain bandwidth product f t (mhz) gain bandwidth product vs. collector current 31030 v ce = 6 v
2SC460, 2sc461 7 0 100 300 200 400 5 2 1 collector to emitter volgage v ce (v) gain bandwidth product f t (mhz) gain bandwidth product vs. collector to emitter voltage 10 20 i c = 1 ma 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) input/output admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 455 khz g ie g ie g oe g oe b oe b oe b ie b ie 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i e = 1 ma (%) input/output admittance vs. collector current 2 1.0 5 v ce = 6 v f = 455 khz g ie g ie b ie b ie g oe g oe b oe b oe 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) transfer admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 455 khz b re b re b fe b fe g fe g fe
2SC460, 2sc461 8 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) transfer admittance vs. collector current 2 1.0 5 v ce = 6 v f = 455 khz b re b re b fe b fe g fe g fe 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) input/output admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 4.5 mhz g ie g ie g oe g oe b oe b oe b ie b ie 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) input/output admittance vs. collector current 2 1.0 5 v ce = 6 v f = 4.5 mhz g ie g ie b ie b ie g oe g oe b oe b oe 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) transfer admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 4.5 mhz b re b fe g fe b re b fe g fe
2SC460, 2sc461 9 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) transfer admittance vs. collector current 2 1.0 5 v ce = 6 v f = 4.5 mhz b fe b fe g fe g fe b re b re 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) input/output admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 10.7 mhz b oe b oe b ie b ie g ie g ie g oe g oe 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) input/output admittance vs. collector current 2 1.0 5 v ce = 6 v f = 10.7 mhz g ie g ie b ie b ie g oe g oe b oe b oe 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) transfer admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 10.7 mhz g ie g ie b fe b fe b re b re
2SC460, 2sc461 10 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) transfer admittance vs. collector current 2 1.0 5 v ce = 6 v f = 10.7 mhz b fe b fe g fe g fe b re b re 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) input/output admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 100 mhz g ie g ie g oe g oe b ie b ie b oe b oe 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) input/output admittance vs. collector current 2 1.0 5 v ce = 6 v f = 100 mhz b oe b oe b ie b ie g ie g ie g oe g oe 10 20 200 100 50 500 5 2 1 collector to emitter voltage v ce (v) percentage of relative to v ce = 6 v (%) transfer admittance vs. collector to emitter voltage 20 10 50 i c = 1 ma f = 100 mhz b fe b fe b re b re g fe g fe
2SC460, 2sc461 11 10 20 200 100 50 500 0.5 0.2 0.1 collector current i c (ma) percentage of relative to i c = 1 ma (%) transfer admittance vs. collector current 2 1.0 5 v ce = 6 v f = 100 mhz b re b re b fe b fe g fe g fe
0.60 max 0.45 0.1 4.8 0.3 3.8 0.3 5.0 0.2 0.7 2.3 max 12.7 min 0.5 1.27 2.54 hitachi code jedec eiaj weight (reference value) to-92 (2) conforms conforms 0.25 g unit: mm
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